Influence of Oxygen Flow Ratio on the Properties of In2O3Thin Films Grown by RF Reactive Magnetron Sputtering
نویسندگان
چکیده
منابع مشابه
Nanocrystalline GaN and GaN:H Films Grown by RF-Magnetron Sputtering
The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...
متن کاملInfluence of target-to-substrate distance on the properties of AZO films grown by RF magnetron sputtering
Transparent conductive aluminum-doped ZnO (AZO) films were prepared by RF magnetron sputtering on glass substrates with specifically designed ZnO target using high-purity of zinc oxide (99.99%) and aluminum hydroxide (99.99%) powders. Systematic study on dependence of target-to-substrate distance (D ) on structural, electrical and optical properties of the as-grown AZO ts films was mainly inves...
متن کاملSi-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment
Silicon-rich Al2O3 films (Six(Al2O3)1-x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The form...
متن کاملEu-doped GaN films grown on sapphire and GaAs substrates by RF magnetron sputtering
The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.
متن کاملBand-gap engineering of ZnO1-xSx films grown by rf magnetron sputtering of ZnS target
Structural and optical properties of ZnO1-хSх (0 ≤ x ≤ 1.0) thin films grown onto sapphire substrates (с-Al2O3) at 300 C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1-хSх band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear depen...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korean Vacuum Society
سال: 2010
ISSN: 1225-8822
DOI: 10.5757/jkvs.2010.19.3.224